 | | | |
| PartNumber | IPB70N10L | IPB70N10S2L-16 | IPB70N10S3 |
| Description | |||
| Manufacturer | - | - | INF |
| Product Category | - | - | FETs - Single |
| Series | - | - | OptiMOS-T |
| Packaging | - | - | Reel |
| Part Aliases | - | - | IPB70N10S312ATMA1 IPB70N10S312XT SP000261246 |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 125 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 8 ns |
| Rise Time | - | - | 8 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 70 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Rds On Drain Source Resistance | - | - | 11.3 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 25 ns |
| Typical Turn On Delay Time | - | - | 17 ns |
| Channel Mode | - | - | Enhancement |