 |  | | |
| PartNumber | IPD031N06L3GATMA1 | IPD031N06L3 | IPD031N06L3 G |
| Description | MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3 | Trans MOSFET N-CH 60V 100A 3-Pin TO-252 T/R (Alt: IPD031N06L3 G) | |
| Manufacturer | Infineon | Infineon Technologies | Infineon Technologies |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 2.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 79 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 167 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 83 S | - | - |
| Fall Time | 13 ns | 13 ns | 13 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 78 ns | 78 ns | 78 ns |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 64 ns | 64 ns | 64 ns |
| Typical Turn On Delay Time | 25 ns | 25 ns | 25 ns |
| Part # Aliases | G IPD031N06L3 IPD31N6L3GXT SP000451076 | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Part Aliases | - | IPD031N06L3GATMA1 IPD031N06L3GXT SP000451076 | IPD031N06L3GATMA1 IPD031N06L3GXT SP000451076 |
| Package Case | - | TO-252-3 | TO-252-3 |
| Pd Power Dissipation | - | 167 W | 167 W |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 100 A | 100 A |
| Vds Drain Source Breakdown Voltage | - | 60 V | 60 V |
| Vgs th Gate Source Threshold Voltage | - | 2.2 V | 2.2 V |
| Rds On Drain Source Resistance | - | 3.1 mOhms | 3.1 mOhms |
| Qg Gate Charge | - | 79 nC | 79 nC |
| Forward Transconductance Min | - | 165 S | 165 S |