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| PartNumber | IPD30N08S222ATMA1 | IPD30N08S2-22 | IPD30N08S2-22 2N0822 |
| Description | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 75 V | 75 V | - |
| Id Continuous Drain Current | 30 A | 30 A | - |
| Rds On Drain Source Resistance | 17.4 mOhms | 17.4 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 57 nC | 57 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 136 W | 136 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 20 ns | 20 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 30 ns | 30 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 33 ns | 33 ns | - |
| Typical Turn On Delay Time | 13 ns | 13 ns | - |
| Part # Aliases | IPD30N08S2-22 IPD3N8S222XT SP000252169 | IPD30N08S222ATMA1 IPD3N8S222XT SP000252169 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |