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| PartNumber | IPD50R650CEATMA1 | IPD50R650CEAUMA1 | IPD50R650CE |
| Description | MOSFET N-Ch 550V 19A DPAK-2 | Trans MOSFET N-CH 500V 6.1A 3-Pin(2+Tab) DPAK T/R | Trans MOSFET N-CH 500(Min)V 6.1A 3-Pin TO-252 T/R - Bulk (Alt: IPD50R650CE) |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 6.1 A | - | - |
| Rds On Drain Source Resistance | 650 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 15 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 47 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | Reel |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | XPD50R650 | - | XPD50R650 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 13 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 27 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Part # Aliases | IPD50R650CEATMA1 SP001117708 | - | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Part Aliases | - | - | IPD50R650CEBTMA1 SP000992078 |
| Package Case | - | - | TO-252-3 |
| Vds Drain Source Breakdown Voltage | - | - | 500 V |