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| PartNumber | IPD90N04S4L-04 | IPD90N04S4L04ATMA1 | IPD90N04S4L-04(1) |
| Description | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 90 A | 90 A | - |
| Rds On Drain Source Resistance | 3.2 mOhms | 3.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 20 V, 16 V | 20 V, 16 V | - |
| Qg Gate Charge | 60 nC | 60 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 71 W | 71 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | OptiMOS-T2 | XPD90N04 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 28 ns | 28 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11 ns | 11 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 22 ns | 22 ns | - |
| Typical Turn On Delay Time | 7 ns | 7 ns | - |
| Part # Aliases | IPD90N04S4L04ATMA1 IPD9N4S4L4XT SP000646188 | IPD90N04S4L-04 IPD9N4S4L4XT SP000646188 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |