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| PartNumber | IPI020N06NAKSA1 | IPI020N06N | IPI020N06NG |
| Description | MOSFET N-Ch 60V 120A I2PAK-3 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 2 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.8 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 106 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 214 W | - | - |
| Configuration | Single | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Tube | - | - |
| Height | 9.45 mm | - | - |
| Length | 10.2 mm | - | - |
| Product | OptiMOS Power | - | - |
| Series | OptiMOS 5 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 4.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 210 S | - | - |
| Fall Time | 19 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 45 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 51 ns | - | - |
| Typical Turn On Delay Time | 24 ns | - | - |
| Part # Aliases | IPI020N06N IPI2N6NXK SP000962132 | - | - |
| Unit Weight | 0.084199 oz | - | - |