PartNumber | IPI65R110CFDXKSA1 | IPI65R150CFD | IPI65R110CFD |
Description | MOSFET N-CH 650V 31.2A TO262 | Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | RF Bipolar Transistors MOSFET N-Ch 700V 31.2A I2PAK-3 CoolMOS CFD2 |
Manufacturer | - | - | FEELING |
Product Category | - | - | FETs - Single |
Series | - | - | CoolMOS CFD2 |
Packaging | - | - | Tube |
Part Aliases | - | - | IPI65R110CFDXK IPI65R110CFDXKSA1 SP000896398 |
Unit Weight | - | - | 0.084199 oz |
Mounting Style | - | - | Through Hole |
Tradename | - | - | CoolMOS |
Package Case | - | - | I2PAK-3 |
Technology | - | - | Si |
Number of Channels | - | - | 1 Channel |
Configuration | - | - | Single |
Transistor Type | - | - | 1 N-Channel |
Pd Power Dissipation | - | - | 277.8 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 6 ns |
Rise Time | - | - | 11 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 31.2 A |
Vds Drain Source Breakdown Voltage | - | - | 700 V |
Rds On Drain Source Resistance | - | - | 110 mOhms |
Transistor Polarity | - | - | N-Channel |
Typical Turn Off Delay Time | - | - | 68 nS |
Qg Gate Charge | - | - | 118 nC |