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| PartNumber | IPI80CN10N G | IPI80CN10N | IPI80N03S4L-03 |
| Description | MOSFET N-Ch 100V 13A I2PAK-3 | MOSFET N-Ch 30V 80A I2PAK-3 OptiMOS-T2 | |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | FETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 13 A | - | - |
| Rds On Drain Source Resistance | 80 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 31 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Tube | - | Tube |
| Height | 9.45 mm | - | - |
| Length | 10.2 mm | - | - |
| Series | IPI80CN10 | - | OptiMOS-T2 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 4.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 3 ns | - | 13 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 4 ns | - | 9 ns |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns | - | 62 ns |
| Typical Turn On Delay Time | 9 ns | - | 14 ns |
| Part # Aliases | IPI80CN10NGAKSA1 | - | - |
| Unit Weight | 0.084199 oz | - | 0.084199 oz |
| Part Aliases | - | - | IPI80N03S4L03AKSA1 IPI80N03S4L03XK SP000273285 |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | I2PAK-3 |
| Pd Power Dissipation | - | - | 136 W |
| Vgs Gate Source Voltage | - | - | 16 V |
| Id Continuous Drain Current | - | - | 80 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 2.7 mOhms |