IPI90N06S4L04AKSA2 vs IPI90N06S4L04AKSA1 vs IPI90N06S4L-04

 
PartNumberIPI90N06S4L04AKSA2IPI90N06S4L04AKSA1IPI90N06S4L-04
DescriptionMOSFET MOSFETMOSFET N-CHANNEL_55/60VIGBT Transistors MOSFET N-Ch 60V 90A I2PAK-3 OptiMOS-T2
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-262-3TO-262-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
ConfigurationSingleSingleSingle
QualificationAEC-Q101--
PackagingTubeTubeTube
Height9.45 mm9.45 mm-
Length10.2 mm10.2 mm-
SeriesIPI90N06-OptiMOS-T2
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width4.5 mm4.5 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity500--
SubcategoryMOSFETsMOSFETs-
Part # AliasesIPI90N06S4L-04 IPI9N6S4L4XK SP001028760IPI90N06S4L-04 IPI90N06S4L04XK SP000415696-
Unit Weight0.084199 oz0.084199 oz0.084199 oz
Part Aliases--IPI90N06S4L04AKSA1 IPI90N06S4L04AKSA2 IPI90N06S4L04XK SP001028760
Tradename--OptiMOS
Package Case--I2PAK-3
Pd Power Dissipation--150 W
Maximum Operating Temperature--+ 175 C
Minimum Operating Temperature--- 55 C
Fall Time--20 ns
Rise Time--6 ns
Vgs Gate Source Voltage--16 V
Id Continuous Drain Current--90 A
Vds Drain Source Breakdown Voltage--60 V
Vgs th Gate Source Threshold Voltage--1.7 V
Rds On Drain Source Resistance--3 mOhms
Typical Turn Off Delay Time--140 ns
Typical Turn On Delay Time--21 ns
Qg Gate Charge--133 nC
Channel Mode--Enhancement
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