IPP12CN10L G vs IPP12CN10L G,12CN10L,IPP vs IPP12CN10LG,IPP10CN10NG,

 
PartNumberIPP12CN10L GIPP12CN10L G,12CN10L,IPPIPP12CN10LG,IPP10CN10NG,
DescriptionMOSFET N-Ch 100V 69A TO220-3 OptiMOS 2
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current69 A--
Rds On Drain Source Resistance9.9 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge58 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation125 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingTube--
Height15.65 mm--
Length10 mm--
SeriesOptiMOS 2--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Forward Transconductance Min57 S--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time39 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesIPP12CN10LGXKSA1 IPP12CN1LGXK SP000680864--
Unit Weight0.211644 oz--
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