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| PartNumber | IPP60R105CFD7XKSA1 | IPP60R120P7XKSA1 | IPP60R120C7XKSA1 |
| Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 21 A | 26 A | - |
| Rds On Drain Source Resistance | 105 mOhms | 100 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 3 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 42 nC | 36 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 106 W | 95 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 8 ns | 6 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 17 ns | 14 ns | - |
| Factory Pack Quantity | 500 | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 94 ns | 81 ns | - |
| Typical Turn On Delay Time | 25 ns | 21 ns | - |
| Part # Aliases | IPP60R105CFD7 SP001715624 | IPP60R120P7 SP001647028 | IPP60R120C7 SP001385054 |
| Tradename | - | CoolMOS | CoolMOS |
| Series | - | CoolMOS P7 | CoolMOS C7 |
| Unit Weight | - | 0.063493 oz | 0.063493 oz |
| Height | - | - | 15.65 mm |
| Length | - | - | 10 mm |
| Width | - | - | 4.4 mm |