PartNumber | IPT60R028G7XTMA1 | IPT60R022S7XTMA1 | IPT60R028G7 |
Description | MOSFET HIGH POWER NEW | MOSFET | |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | HSOF-8 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Id Continuous Drain Current | 75 A | - | - |
Rds On Drain Source Resistance | 28 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 123 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 391 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | Reel | - |
Series | CoolMOS G7 | - | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 2.8 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 9 ns | - | - |
Factory Pack Quantity | 2000 | 2000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 100 ns | - | - |
Typical Turn On Delay Time | 28 ns | - | - |
Part # Aliases | IPT60R028G7 SP001579312 | IPT60R022S7 SP003330410 | - |