PartNumber | IPU135N08N3 | IPU135N08N3G | IPU135N08N3GBKMA1 |
Description | |||
Manufacturer | Infineon Technologies | - | - |
Product Category | Transistors - FETs, MOSFETs - Single | - | - |
Series | IPU135N08 | - | - |
Packaging | Tube | - | - |
Part Aliases | IPU135N08N3GBKMA1 SP000521642 | - | - |
Unit Weight | 0.139332 oz | - | - |
Mounting Style | Through Hole | - | - |
Tradename | OptiMOS | - | - |
Package Case | IPAK-3 | - | - |
Technology | Si | - | - |
Number of Channels | 1 Channel | - | - |
Configuration | Single | - | - |
Transistor Type | 1 N-Channel | - | - |
Pd Power Dissipation | 79 W | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Fall Time | 5 ns | - | - |
Rise Time | 35 ns | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Id Continuous Drain Current | 50 A | - | - |
Vds Drain Source Breakdown Voltage | 80 V | - | - |
Rds On Drain Source Resistance | 13.5 mOhms | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Turn Off Delay Time | 18 ns | - | - |
Typical Turn On Delay Time | 12 ns | - | - |
Channel Mode | Enhancement | - | - |