IPU60R950C6BKMA1 vs IPU60R950C6AKMA1 vs IPU60R950C6

 
PartNumberIPU60R950C6BKMA1IPU60R950C6AKMA1IPU60R950C6
DescriptionMOSFET N-Ch 650V 4.4A IPAK-3MOSFET LOW POWER_LEGACYMOSFET N-Ch 650V 4.4A IPAK-3
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-251-3TO-251-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current4.4 A4.4 A-
Rds On Drain Source Resistance860 mOhms860 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge13 nC13 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation37 W37 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameCoolMOSCoolMOS-
PackagingTubeTubeTube
Height6.22 mm6.22 mm-
Length6.73 mm6.73 mm-
SeriesIPU60R950CoolMOS C6XPU60R950
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width2.38 mm2.38 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time13 ns13 ns-
Product TypeMOSFETMOSFET-
Rise Time8 ns8 ns-
Factory Pack Quantity15001500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time60 ns60 ns-
Typical Turn On Delay Time10 ns10 ns-
Part # AliasesIPU60R950C6 IPU60R950C6XK SP000931532IPU60R950C6AKMA1 SP001292888-
Unit Weight0.012102 oz0.139332 oz0.012102 oz
Forward Transconductance Min---
Development Kit---
Part Aliases--IPU60R950C6BKMA1 IPU60R950C6XK SP000931532
Package Case--TO-251-3
Vds Drain Source Breakdown Voltage--600 V
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