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| PartNumber | IPW65R080CFDA | IPW65R080CFDA 65F6080A | IPW65R080CFDA IPW65R080C |
| Description | MOSFET N-Ch 650V 43.3A TO247-3 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 43.3 A | - | - |
| Rds On Drain Source Resistance | 72 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 161 nC | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 391 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Tube | - | - |
| Height | 21.1 mm | - | - |
| Length | 16.13 mm | - | - |
| Series | CoolMOS CFDA | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.21 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 18 ns | - | - |
| Factory Pack Quantity | 240 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 85 ns | - | - |
| Typical Turn On Delay Time | 20 ns | - | - |
| Part # Aliases | IPW65R080CFDAFKSA1 IPW65R8CFDAXK SP000875806 | - | - |
| Unit Weight | 1.340411 oz | - | - |