IRF6201TRPBF vs IRF6201PBF vs IRF6201

 
PartNumberIRF6201TRPBFIRF6201PBFIRF6201
DescriptionMOSFET MOSFT 20V 27A 2.5mOhm 2.5V cpblMOSFET 20V 1 N-CH HEXFET 2.45mOhms 130nC
ManufacturerInfineonInfineonInternational Rectifier
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-8SO-8-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current27 A27 A-
Rds On Drain Source Resistance2.45 mOhms2.45 mOhms-
Vgs Gate Source Voltage12 V12 V-
Qg Gate Charge130 nC130 nC-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationSingleSingleSingle Quad Drain Triple Source
PackagingReelTubeTube
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width3.9 mm3.9 mm-
BrandInfineon TechnologiesInfineon / IR-
Product TypeMOSFETMOSFET-
Factory Pack Quantity400095-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001563314SP001570096-
Unit Weight0.019048 oz0.019048 oz0.019048 oz
Vgs th Gate Source Threshold Voltage-1.1 V-
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
Channel Mode-EnhancementEnhancement
Type-HEXFET Power MOSFET-
Fall Time-265 ns265 ns
Rise Time-100 ns100 ns
Typical Turn Off Delay Time-320 ns320 ns
Typical Turn On Delay Time-29 ns29 ns
Package Case--SOIC-8
Pd Power Dissipation--2.5 W
Vgs Gate Source Voltage--12 V
Id Continuous Drain Current--27 A
Vds Drain Source Breakdown Voltage--20 V
Vgs th Gate Source Threshold Voltage--0.5 V to 1.1 V
Rds On Drain Source Resistance--2.45 mOhms
Qg Gate Charge--130 nC
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