PartNumber | IRF6201TRPBF | IRF6201PBF | IRF6201 |
Description | MOSFET MOSFT 20V 27A 2.5mOhm 2.5V cpbl | MOSFET 20V 1 N-CH HEXFET 2.45mOhms 130nC | |
Manufacturer | Infineon | Infineon | International Rectifier |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SO-8 | SO-8 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
Id Continuous Drain Current | 27 A | 27 A | - |
Rds On Drain Source Resistance | 2.45 mOhms | 2.45 mOhms | - |
Vgs Gate Source Voltage | 12 V | 12 V | - |
Qg Gate Charge | 130 nC | 130 nC | - |
Pd Power Dissipation | 2.5 W | 2.5 W | - |
Configuration | Single | Single | Single Quad Drain Triple Source |
Packaging | Reel | Tube | Tube |
Height | 1.75 mm | 1.75 mm | - |
Length | 4.9 mm | 4.9 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 3.9 mm | 3.9 mm | - |
Brand | Infineon Technologies | Infineon / IR | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 4000 | 95 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | SP001563314 | SP001570096 | - |
Unit Weight | 0.019048 oz | 0.019048 oz | 0.019048 oz |
Vgs th Gate Source Threshold Voltage | - | 1.1 V | - |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Channel Mode | - | Enhancement | Enhancement |
Type | - | HEXFET Power MOSFET | - |
Fall Time | - | 265 ns | 265 ns |
Rise Time | - | 100 ns | 100 ns |
Typical Turn Off Delay Time | - | 320 ns | 320 ns |
Typical Turn On Delay Time | - | 29 ns | 29 ns |
Package Case | - | - | SOIC-8 |
Pd Power Dissipation | - | - | 2.5 W |
Vgs Gate Source Voltage | - | - | 12 V |
Id Continuous Drain Current | - | - | 27 A |
Vds Drain Source Breakdown Voltage | - | - | 20 V |
Vgs th Gate Source Threshold Voltage | - | - | 0.5 V to 1.1 V |
Rds On Drain Source Resistance | - | - | 2.45 mOhms |
Qg Gate Charge | - | - | 130 nC |