PartNumber | IRF640SPBF | IRF640S F640S | IRF640S |
Description | MOSFET N-Chan 200V 18 Amp | MOSFET N-CH 200V 18A D2PAK | |
Manufacturer | Vishay | - | IR |
Product Category | MOSFET | - | IC Chips |
RoHS | E | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 200 V | - | - |
Id Continuous Drain Current | 18 A | - | - |
Rds On Drain Source Resistance | 180 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 70 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 130 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Series | IRF | - | - |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 6.7 S | - | - |
Fall Time | 36 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 51 ns | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 45 ns | - | - |
Typical Turn On Delay Time | 14 ns | - | - |
Unit Weight | 0.050717 oz | - | - |