IRF6802SDTR1PBF vs IRF6810STR1PBF vs IRF6802SDTRPBF

 
PartNumberIRF6802SDTR1PBFIRF6810STR1PBFIRF6802SDTRPBF
DescriptionMOSFET 25V Dual Control FET in S- CanMOSFET N CH 25V 16A S1MOSFET 2N-CH 25V 16A SA
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseDirectFET-SA--
Number of Channels2 Channel-2 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current16 A--
Rds On Drain Source Resistance3.2 mOhms--
Pd Power Dissipation1.7 W--
ConfigurationDual-Dual
PackagingReel-Tape & Reel (TR)
Height1.11 mm--
Length3 mm--
Transistor Type2 N-Channel-2 N-Channel
Width3 mm--
BrandInfineon / IR--
Moisture SensitiveYes--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Part # AliasesSP001529168--
Series---
Tradename--DirectFET
Package Case--DirectFET Isometric SA
Operating Temperature---40°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--DIRECTFET SA
FET Type--2 N-Channel (Dual)
Power Max--1.7W
Drain to Source Voltage Vdss--25V
Input Capacitance Ciss Vds--1350pF @ 13V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--16A
Rds On Max Id Vgs--4.2 mOhm @ 16A, 10V
Vgs th Max Id--2.1V @ 35μA
Gate Charge Qg Vgs--13nC @ 4.5V
Pd Power Dissipation--1.7 W
Id Continuous Drain Current--16 A
Vds Drain Source Breakdown Voltage--25 V
Rds On Drain Source Resistance--4.5 mOhms
Top