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| PartNumber | IRF7314PBF | IRF7314 | IRF7314Q |
| Description | MOSFET 20V DUAL N / P CH 12V VGS MAX | MOSFET Transistor, Matched Pair, P-Channel, SO | |
| Manufacturer | Infineon | Infineon Technologies | IR |
| Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 5.3 A | - | - |
| Rds On Drain Source Resistance | 98 mOhms | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 19 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube Alternate Packaging | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 2 P-Channel | 2 P-Channel | - |
| Type | Power MOSFET | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 49 ns | 49 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 40 ns | 40 ns | - |
| Factory Pack Quantity | 3800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 42 ns | 42 ns | - |
| Typical Turn On Delay Time | 15 ns | 15 ns | - |
| Part # Aliases | SP001562198 | - | - |
| Unit Weight | 0.019048 oz | 0.019048 oz | - |
| Series | - | HEXFETR | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-SO | - |
| FET Type | - | 2 P-Channel (Dual) | - |
| Power Max | - | 2W | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 780pF @ 15V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 5.3A | - |
| Rds On Max Id Vgs | - | 58 mOhm @ 2.9A, 4.5V | - |
| Vgs th Max Id | - | 700mV @ 250μA | - |
| Gate Charge Qg Vgs | - | 29nC @ 4.5V | - |
| Pd Power Dissipation | - | 2 W | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Id Continuous Drain Current | - | - 5.3 A | - |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - |
| Rds On Drain Source Resistance | - | 98 mOhms | - |
| Qg Gate Charge | - | 19 nC | - |