IRF7328PBF vs IRF7328 vs IRF7328TR

 
PartNumberIRF7328PBFIRF7328IRF7328TR
DescriptionMOSFET DUAL -30V P-CH 20V VGS MAXMOSFET Transistor, Matched Pair, P-Channel, SOMOSFET 2P-CH 30V 8A 8-SOIC
ManufacturerInfineonIORInfineon Technologies
Product CategoryMOSFETIC ChipsFETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance21 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge52 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingTube-Tape & Reel (TR)
Height1.75 mm--
Length4.9 mm--
Transistor Type2 P-Channel--
TypePower MOSFET--
Width3.9 mm--
BrandInfineon Technologies--
Fall Time98 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity3800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time198 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesSP001555158--
Unit Weight0.019048 oz--
Series--HEXFETR
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SO
FET Type--2 P-Channel (Dual)
Power Max--2W
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--2675pF @ 25V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--8A
Rds On Max Id Vgs--21 mOhm @ 8A, 10V
Vgs th Max Id--2.5V @ 250μA
Gate Charge Qg Vgs--78nC @ 10V
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