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| PartNumber | IRF7329 | IRF7329PBF | IRF7329TR |
| Description | Trans MOSFET P-CH Si 12V 9.2A 8-Pin SOIC Tube | MOSFET 2P-CH 12V 9.2A 8-SOIC | |
| Manufacturer | IR | Infineon Technologies | Infineon Technologies |
| Product Category | FETs - Arrays | FETs - Arrays | FETs - Arrays |
| Series | - | HEXFETR | HEXFETR |
| Packaging | - | Tube Alternate Packaging | Tape & Reel (TR) |
| Unit Weight | - | 0.019048 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Technology | - | Si | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | - | Surface Mount | Surface Mount |
| Number of Channels | - | 2 Channel | - |
| Supplier Device Package | - | 8-SO | 8-SO |
| Configuration | - | Dual | - |
| FET Type | - | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
| Power Max | - | 2W | 2W |
| Transistor Type | - | 2 P-Channel | - |
| Drain to Source Voltage Vdss | - | 12V | 12V |
| Input Capacitance Ciss Vds | - | 3450pF @ 10V | 3450pF @ 10V |
| FET Feature | - | Logic Level Gate | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | 9.2A | 9.2A |
| Rds On Max Id Vgs | - | 17 mOhm @ 9.2A, 4.5V | 17 mOhm @ 9.2A, 4.5V |
| Vgs th Max Id | - | 900mV @ 250μA | 900mV @ 250μA |
| Gate Charge Qg Vgs | - | 57nC @ 4.5V | 57nC @ 4.5V |
| Pd Power Dissipation | - | 2 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 260 ns | - |
| Rise Time | - | 8.6 ns | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Id Continuous Drain Current | - | - 9.2 A | - |
| Vds Drain Source Breakdown Voltage | - | - 12 V | - |
| Rds On Drain Source Resistance | - | 17 mOhms | - |
| Transistor Polarity | - | P-Channel | - |
| Typical Turn Off Delay Time | - | 340 ns | - |
| Typical Turn On Delay Time | - | 10 ns | - |
| Qg Gate Charge | - | 38 nC | - |
| Channel Mode | - | Enhancement | - |