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| PartNumber | IRF7855PBF | IRF7855 | IRF7855TRPB |
| Description | MOSFET 60V 1 N-CH HEXFET 9.4mOhms 26nC | ||
| Manufacturer | Infineon | KEXIN | IR |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 9.4 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 26 nC | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | Single |
| Packaging | Tube | - | Reel |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3800 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001575224 | - | - |
| Unit Weight | 0.019048 oz | - | 0.017870 oz |
| Package Case | - | - | SO-8 |
| Pd Power Dissipation | - | - | 2.5 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 12 ns |
| Rise Time | - | - | 13 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 12 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4.9 V |
| Rds On Drain Source Resistance | - | - | 7.4 mOhms |
| Typical Turn Off Delay Time | - | - | 16 ns |
| Typical Turn On Delay Time | - | - | 8.7 ns |
| Qg Gate Charge | - | - | 26 nC |
| Forward Transconductance Min | - | - | 14 S |