 |  | | |
| PartNumber | IRF830 | IRF830 CHN | IRF830-HF |
| Description | MOSFET N-CH 500V 4.5A TO-220AB | ||
| Manufacturer | IR | - | - |
| Product Category | FETs - Single | - | - |
| Packaging | Tube | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Mounting Style | Through Hole | - | - |
| Package Case | TO-220-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 74 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 16 ns | - | - |
| Rise Time | 16 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 4.5 A | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Rds On Drain Source Resistance | 1.5 Ohms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 42 ns | - | - |
| Typical Turn On Delay Time | 8.2 ns | - | - |
| Channel Mode | Enhancement | - | - |