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| PartNumber | IRF9630SPBF | IRF9630S | IRF9630STRL |
| Description | MOSFET P-CH -200V HEXFET MOSFET | MOSFET RECOMMENDED ALT 844-IRF9630SPBF | MOSFET P-CH 200V 6.5A D2PAK |
| Manufacturer | Vishay | Vishay | IR/VISHAY |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | E | N | - |
| Technology | Si | Si | Si |
| Packaging | Tube | Tube | Digi-ReelR Alternate Packaging |
| Series | IRF | IRF | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.050717 oz | 0.050717 oz | 0.050717 oz |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | TO-263-3 | - |
| Height | - | 4.83 mm | - |
| Length | - | 10.67 mm | - |
| Width | - | 9.65 mm | - |
| Package Case | - | - | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 1 Channel |
| Supplier Device Package | - | - | D2PAK |
| Configuration | - | - | Single |
| FET Type | - | - | MOSFET P-Channel, Metal Oxide |
| Power Max | - | - | 3W |
| Transistor Type | - | - | 1 P-Channel |
| Drain to Source Voltage Vdss | - | - | 200V |
| Input Capacitance Ciss Vds | - | - | 700pF @ 25V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 6.5A (Tc) |
| Rds On Max Id Vgs | - | - | 800 mOhm @ 3.9A, 10V |
| Vgs th Max Id | - | - | 4V @ 250μA |
| Gate Charge Qg Vgs | - | - | 29nC @ 10V |
| Pd Power Dissipation | - | - | 3 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 24 ns |
| Rise Time | - | - | 27 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 6.5 A |
| Vds Drain Source Breakdown Voltage | - | - | - 200 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 2 V to - 4 V |
| Rds On Drain Source Resistance | - | - | 800 mOhms |
| Transistor Polarity | - | - | P-Channel |
| Typical Turn Off Delay Time | - | - | 28 ns |
| Typical Turn On Delay Time | - | - | 12 ns |
| Qg Gate Charge | - | - | 29 nC |
| Forward Transconductance Min | - | - | 2.8 S |
| Channel Mode | - | - | Enhancement |