IRF9953TRPBF vs IRF9953TRPBF-CUT TAPE vs IRF9953TR

 
PartNumberIRF9953TRPBFIRF9953TRPBF-CUT TAPEIRF9953TR
DescriptionMOSFET MOSFT DUAL PCh -30V 2.3AMOSFET 2P-CH 30V 2.3A 8-SOIC
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current2.3 A--
Rds On Drain Source Resistance165 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge6.9 nC--
Pd Power Dissipation2 W--
ConfigurationDual--
PackagingReel-Tape & Reel (TR)
Height1.75 mm--
Length4.9 mm--
Transistor Type2 P-Channel--
Width3.9 mm--
BrandInfineon / IR--
Product TypeMOSFET--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Part # AliasesSP001555962--
Unit Weight0.019048 oz--
Series--HEXFETR
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SO
FET Type--2 P-Channel (Dual)
Power Max--2W
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--190pF @ 15V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--2.3A
Rds On Max Id Vgs--250 mOhm @ 1A, 10V
Vgs th Max Id--1V @ 250μA
Gate Charge Qg Vgs--12nC @ 10V
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