IRF9956PBF vs IRF9956 vs IRF9956TR

 
PartNumberIRF9956PBFIRF9956IRF9956TR
DescriptionMOSFET 30V N-CH HEXFET 7.7mOhms 11nCMOSFET 2N-CH 30V 3.5A 8-SOICMOSFET 2N-CH 30V 3.5A 8-SOIC
ManufacturerInfineonInfineon TechnologiesIR
Product CategoryMOSFETFETs - ArraysFETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current3.5 A--
Rds On Drain Source Resistance200 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge11 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingTubeTubeTape & Reel (TR)
Height1.75 mm--
Length4.9 mm--
Transistor Type2 N-Channel--
TypeHEXFET Power MOSFET--
Width3.9 mm--
BrandInfineon / IR--
Forward Transconductance Min12 S--
Fall Time3 ns--
Product TypeMOSFET--
Rise Time8.8 ns--
Factory Pack Quantity95--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns--
Typical Turn On Delay Time6.2 ns--
Part # AliasesSP001565670--
Unit Weight0.019048 oz--
Series-HEXFETRHEXFETR
Package Case-8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)
Operating Temperature--55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting Type-Surface MountSurface Mount
Supplier Device Package-8-SO8-SO
FET Type-2 N-Channel (Dual)2 N-Channel (Dual)
Power Max-2W2W
Drain to Source Voltage Vdss-30V30V
Input Capacitance Ciss Vds-190pF @ 15V190pF @ 15V
FET Feature-Logic Level GateLogic Level Gate
Current Continuous Drain Id 25°C-3.5A3.5A
Rds On Max Id Vgs-100 mOhm @ 2.2A, 10V100 mOhm @ 2.2A, 10V
Vgs th Max Id-1V @ 250μA1V @ 250μA
Gate Charge Qg Vgs-14nC @ 10V14nC @ 10V
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