IRFB23N20DPBF vs IRFB23N20DPBF,FB23N20D,I vs IRFB23N20DPBF,IRFB23N20D

 
PartNumberIRFB23N20DPBFIRFB23N20DPBF,FB23N20D,IIRFB23N20DPBF,IRFB23N20D
DescriptionMOSFET MOSFT 200V 24A 100mOhm 57nC
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current24 A--
Rds On Drain Source Resistance100 mOhms--
Vgs th Gate Source Threshold Voltage5.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge57 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation170 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height15.65 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Forward Transconductance Min13 S--
Fall Time16 ns--
Product TypeMOSFET--
Rise Time32 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time26 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesSP001564048--
Unit Weight0.211644 oz--
Top