IRFHM830DTR2PBF vs IRFHM830D vs IRFHM830DTRPBF.

 
PartNumberIRFHM830DTR2PBFIRFHM830DIRFHM830DTRPBF.
DescriptionMOSFET 30V 1 N-CH HEXFET 4.3mOhms 13nC
ManufacturerInfineonInternational Rectifier-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePQFN-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current20 A--
Rds On Drain Source Resistance5.7 mOhms--
Vgs th Gate Source Threshold Voltage1.8 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge13 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.8 W--
ConfigurationSingleSingle Quad Drain Triple Source-
PackagingReelReel-
Height1.05 mm--
Length3.3 mm--
Transistor Type1 N-Channel1 N-Channel-
Width3.3 mm--
BrandInfineon / IR--
Forward Transconductance Min69 S--
Fall Time6.7 ns6.7 ns-
Product TypeMOSFET--
Rise Time20 ns20 ns-
Factory Pack Quantity400--
SubcategoryMOSFETs--
Typical Turn Off Delay Time9.1 ns9.1 ns-
Typical Turn On Delay Time9.8 ns9.8 ns-
Part # AliasesSP001551956--
Unit Weight0.017637 oz--
Package Case-PQFN-8-
Pd Power Dissipation-2.8 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-20 A-
Vds Drain Source Breakdown Voltage-30 V-
Vgs th Gate Source Threshold Voltage-1.8 V-
Rds On Drain Source Resistance-5.7 mOhms-
Qg Gate Charge-13 nC-
Forward Transconductance Min-69 S-
Channel Mode-Enhancement-
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