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| PartNumber | IRFR3709ZTRLPBF | IRFR3709ZTRPBF | IRFR3709ZTR |
| Description | MOSFET MOSFT 30V 86A 6.5mOhm 17nC | MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC | MOSFET, N-CH, 40V, 86A, TO-252 |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 86 A | 86 A | - |
| Rds On Drain Source Resistance | 6.5 mOhms | 6.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.25 V | 2.25 V | - |
| Qg Gate Charge | 26 nC | 17 nC | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 79 W | 79 W | - |
| Configuration | Single | Single | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 51 S | 51 S | - |
| Fall Time | 3.9 ns | 3.9 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 12 ns | 12 ns | - |
| Factory Pack Quantity | 3000 | 2000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SP001556992 | SP001573340 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Channel Mode | - | Enhancement | - |
| Typical Turn Off Delay Time | - | 15 ns | - |
| Typical Turn On Delay Time | - | 12 ns | - |