IRFS52N15DTRLP vs IRFS52N15DTRRP vs IRFS52N15DTR

 
PartNumberIRFS52N15DTRLPIRFS52N15DTRRPIRFS52N15DTR
DescriptionMOSFET MOSFT 150V 60A 32mOhm 60nCMOSFET 150V 1 N-CH HEXFET 32mOhms 60nC
ManufacturerInfineonInfineonIR
Product CategoryMOSFETMOSFETIC Chips
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage150 V150 V-
Id Continuous Drain Current60 A44 A-
Rds On Drain Source Resistance32 mOhms32 mOhms-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge60 nC60 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation3.8 W3.8 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm6.22 mm-
BrandInfineon / IRInfineon / IR-
Fall Time25 ns25 ns25 ns
Product TypeMOSFETMOSFET-
Rise Time47 ns47 ns47 ns
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time28 ns28 ns28 ns
Typical Turn On Delay Time16 ns16 ns16 ns
Part # AliasesSP001578238SP001568000-
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--3.8 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--60 A
Vds Drain Source Breakdown Voltage--150 V
Rds On Drain Source Resistance--32 mOhms
Qg Gate Charge--60 nC
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