IRFSL4010PBF vs IRFSL4020PBF vs IRFSL4115PBF

 
PartNumberIRFSL4010PBFIRFSL4020PBFIRFSL4115PBF
DescriptionMOSFET MOSFT 100V 180A 4.7mOhm 143nCMOSFET Audio MOSFT 200V 18A 105mOhm 18nCDarlington Transistors MOSFET MOSFT 150V 99A 12.1mOhm 77nC
ManufacturerInfineonInfineonInternational Rectifier
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-262-3TO-262-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V200 V-
Id Continuous Drain Current180 A18 A-
Rds On Drain Source Resistance3.9 mOhms105 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge143 nC18 nC-
Pd Power Dissipation375 W100 W-
ConfigurationSingleSingle-
PackagingTubeTubeTube
Height9.45 mm9.45 mm-
Length10.2 mm10.2 mm-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width4.5 mm4.5 mm-
BrandInfineon TechnologiesInfineon / IR-
Product TypeMOSFETMOSFET-
Factory Pack Quantity100050-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001567760SP001565208-
Unit Weight0.084199 oz0.084199 oz0.084199 oz
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Channel Mode-Enhancement-
Forward Transconductance Min-24 S-
Fall Time-6.3 ns-
Rise Time-12 ns-
Typical Turn Off Delay Time-16 ns-
Typical Turn On Delay Time-7.8 ns-
Package Case--I2PAK-3
Pd Power Dissipation--375 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--99 A
Vds Drain Source Breakdown Voltage--150 V
Rds On Drain Source Resistance--10.3 mOhms
Qg Gate Charge--77 nC
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