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| PartNumber | IRG4PF50WPBF | IRG4PF50WPB | IRG4PF50WPBF,G4PF50W,IRG |
| Description | IGBT Transistors 900V Warp 20-100kHz | ||
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | IGBT Transistors | IGBTs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 900 V | - | - |
| Collector Emitter Saturation Voltage | 2.25 V | 2.25 V | - |
| Maximum Gate Emitter Voltage | 20 V | +/- 20 V | - |
| Continuous Collector Current at 25 C | 51 A | 51 A | - |
| Pd Power Dissipation | 200 W | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Tube | Bulk | - |
| Continuous Collector Current Ic Max | 51 A | 51 A | - |
| Height | 20.7 mm | - | - |
| Length | 15.87 mm | - | - |
| Width | 5.31 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Gate Emitter Leakage Current | 100 nA | 100 nA | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 400 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | SP001533582 | - | - |
| Unit Weight | 1.340411 oz | 1.340411 oz | - |
| Series | - | - | - |
| Package Case | - | TO-247-3 | - |
| Input Type | - | Standard | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | TO-247AC | - |
| Power Max | - | 200W | - |
| Reverse Recovery Time trr | - | - | - |
| Current Collector Ic Max | - | 51A | - |
| Voltage Collector Emitter Breakdown Max | - | 900V | - |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | - | 204A | - |
| Vce on Max Vge Ic | - | 2.7V @ 15V, 28A | - |
| Switching Energy | - | 190μJ (on), 1.06mJ (off) | - |
| Gate Charge | - | 160nC | - |
| Td on off 25°C | - | 29ns/110ns | - |
| Test Condition | - | 720V, 28A, 5 Ohm, 15V | - |
| Pd Power Dissipation | - | 200 W | - |
| Collector Emitter Voltage VCEO Max | - | 900 V | - |