IRG4PH30KPBF vs IRG4PH30KPBF,IRG4PH30K,G vs IRG4PH30KPBF,IRG4PH30K,I

 
PartNumberIRG4PH30KPBFIRG4PH30KPBF,IRG4PH30K,GIRG4PH30KPBF,IRG4PH30K,I
DescriptionIGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage3.1 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C20 A--
Pd Power Dissipation100 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube--
Continuous Collector Current Ic Max20 A--
Height20.3 mm--
Length15.9 mm--
Width5.3 mm--
BrandInfineon / IR--
Product TypeIGBT Transistors--
Factory Pack Quantity400--
SubcategoryIGBTs--
Part # AliasesSP001540542--
Unit Weight1.340411 oz--
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