IRG4PH50S-EPBF vs IRG4PH50S vs IRG4PH50S,G4PH50S,IRG4PH

 
PartNumberIRG4PH50S-EPBFIRG4PH50SIRG4PH50S,G4PH50S,IRG4PH
DescriptionIGBT Transistors 1200V DC-1kHz w/ exetended leadINSTOCK
ManufacturerInfineonIR-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247AD-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage1.7 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C57 A--
Pd Power Dissipation200 W--
Minimum Operating Temperature- 55 C--
PackagingTube--
Height20.7 mm--
Length15.87 mm--
Width5.31 mm--
BrandInfineon Technologies--
Product TypeIGBT Transistors--
Factory Pack Quantity25--
SubcategoryIGBTs--
Part # AliasesSP001545684--
Unit Weight0.229281 oz--
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