IRG4PSH71KDPBF vs IRG4PSH71KD vs IRG4PSH71KDPBF,IRG4PSH71

 
PartNumberIRG4PSH71KDPBFIRG4PSH71KDIRG4PSH71KDPBF,IRG4PSH71
DescriptionIGBT Transistors 1200V UltraFast 4-20kHzIGBT 1200V 78A 350W SUPER247
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-274-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage2.97 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C78 A--
Pd Power Dissipation350 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTubeBulk-
Continuous Collector Current Ic Max78 A--
Height20.3 mm--
Length15.6 mm--
Width5 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity25--
SubcategoryIGBTs--
Part # AliasesSP001547842--
Unit Weight0.211644 oz--
Series---
Package Case-TO-274AA-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-SUPER-247 (TO-274AA)-
Power Max-350W-
Reverse Recovery Time trr-107ns-
Current Collector Ic Max-78A-
Voltage Collector Emitter Breakdown Max-1200V-
IGBT Type---
Current Collector Pulsed Icm-156A-
Vce on Max Vge Ic-3.9V @ 15V, 42A-
Switching Energy-5.68mJ (on), 3.23mJ (off)-
Gate Charge-410nC-
Td on off 25°C-67ns/230ns-
Test Condition-800V, 42A, 5 Ohm, 15V-
Top