IRG7PSH50UDPBF vs IRG7PSH3K10 vs IRG7PSH50UD

 
PartNumberIRG7PSH50UDPBFIRG7PSH3K10IRG7PSH50UD
DescriptionIGBT Transistors IGBT DISCRETES
ManufacturerInfineon-Infineon Technologies
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-274AA-3--
Mounting StyleThrough Hole-Through Hole
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage2 V-2 V
Maximum Gate Emitter Voltage30 V-+/- 30 V
Continuous Collector Current at 25 C116 A-116 A
Pd Power Dissipation462 W--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
PackagingTube-Tube
Continuous Collector Current Ic Max116 A-116 A
BrandInfineon / IR--
Gate Emitter Leakage Current+/- 200 nA-+/- 200 nA
Product TypeIGBT Transistors--
Factory Pack Quantity25--
SubcategoryIGBTs--
Part # AliasesSP001532744--
Series---
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--SUPER-247 (TO-274AA)
Power Max--462W
Reverse Recovery Time trr--190ns
Current Collector Ic Max--116A
Voltage Collector Emitter Breakdown Max--1200V
IGBT Type--Trench
Current Collector Pulsed Icm--150A
Vce on Max Vge Ic--2V @ 15V, 50A
Switching Energy--3.6mJ (on), 2.2mJ (off)
Gate Charge--440nC
Td on off 25°C--35ns/430ns
Test Condition--600V, 50A, 5 Ohm, 15V
Pd Power Dissipation--462 W
Collector Emitter Voltage VCEO Max--1.2 kV
Top