PartNumber | IRG8P40N120KD-EPBF | IRG8P40N120KD | IRG8P40N120KDE |
Description | IGBT Transistors 1200V IGBT GEN8 | ||
Manufacturer | Infineon Technologies | Infineon Technologies | - |
Product Category | IGBTs - Single | IGBTs - Single | - |
Series | - | - | - |
Packaging | Tube | Tube | - |
Unit Weight | 0.229281 oz | 0.229281 oz | - |
Mounting Style | Through Hole | Through Hole | - |
Package Case | TO-247-3 | TO-247-3 | - |
Input Type | Standard | Standard | - |
Mounting Type | Through Hole | Through Hole | - |
Supplier Device Package | TO-247AD | TO-247AD | - |
Configuration | Single | Single | - |
Power Max | 305W | 305W | - |
Reverse Recovery Time trr | 80ns | 80ns | - |
Current Collector Ic Max | 60A | 60A | - |
Voltage Collector Emitter Breakdown Max | 1200V | 1200V | - |
IGBT Type | - | - | - |
Current Collector Pulsed Icm | 75A | 75A | - |
Vce on Max Vge Ic | 2V @ 15V, 25A | 2V @ 15V, 25A | - |
Switching Energy | 1.6mJ (on), 1.8mJ (off) | 1.6mJ (on), 1.8mJ (off) | - |
Gate Charge | 240nC | 240nC | - |
Td on off 25°C | 40ns/245ns | 40ns/245ns | - |
Test Condition | 600V, 25A, 10 Ohm, 15V | 600V, 25A, 10 Ohm, 15V | - |
Pd Power Dissipation | 305 W | 305 W | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | - |
Continuous Collector Current at 25 C | 60 A | 60 A | - |
Gate Emitter Leakage Current | 200 nA | 200 nA | - |
Maximum Gate Emitter Voltage | 30 V | 30 V | - |
Continuous Collector Current Ic Max | 40 A | 40 A | - |