IRGP4650D-EPBF vs IRGP4650D vs IRGP4650D-E IRGP4650D-EP

 
PartNumberIRGP4650D-EPBFIRGP4650DIRGP4650D-E IRGP4650D-EP
DescriptionIGBT Transistors 600V UltraFast IGBT 50A 268W 104nC
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247AD-3--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.6 V1.9 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C76 A50 A-
Pd Power Dissipation268 W--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesTRENCHSTOP--
PackagingTubeTube-
Height20.7 mm--
Length15.87 mm--
Width5.31 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT Transistors--
Factory Pack Quantity400--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesSP001535810--
Unit Weight1.340411 oz1.340411 oz-
Package Case-TO-247-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-247AD-
Power Max-268W-
Reverse Recovery Time trr-120ns-
Current Collector Ic Max-76A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type---
Current Collector Pulsed Icm-105A-
Vce on Max Vge Ic-1.9V @ 15V, 35A-
Switching Energy-390μJ (on), 632μJ (off)-
Gate Charge-104nC-
Td on off 25°C-46ns/105ns-
Test Condition-400V, 35A, 10 Ohm, 15V-
Pd Power Dissipation-134 W-
Collector Emitter Voltage VCEO Max-600 V-
Continuous Collector Current Ic Max-76 A-
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