IRGR3B60KD2TRP vs IRGR3B60KD2TRLP vs IRGR3B60KD2TR

 
PartNumberIRGR3B60KD2TRPIRGR3B60KD2TRLPIRGR3B60KD2TR
DescriptionIGBT Transistors IGBT DISCRETESIGBT Transistors IGBT DISCRETES
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseTO-252AA-3TO-252AA-3-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage1.9 V1.9 V-
Maximum Gate Emitter Voltage20 V20 V+/- 20 V
Continuous Collector Current at 25 C7.8 A7.8 A7.8 A
Pd Power Dissipation52 W52 W-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesRCRC-
PackagingReelReelDigi-ReelR Alternate Packaging
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
Width6.22 mm6.22 mm-
BrandInfineon / IRInfineon / IR-
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity20003000-
SubcategoryIGBTsIGBTs-
TradenameTRENCHSTOPTRENCHSTOP-
Part # AliasesSP001534036SP001534052-
Unit Weight0.012346 oz0.012346 oz0.012346 oz
Package Case--TO-252-3, DPak (2 Leads + Tab), SC-63
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D-Pak
Power Max--52W
Reverse Recovery Time trr--77ns
Current Collector Ic Max--7.8A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type--NPT
Current Collector Pulsed Icm--15.6A
Vce on Max Vge Ic--2.4V @ 15V, 3A
Switching Energy--62μJ (on), 39μJ (off)
Gate Charge--13nC
Td on off 25°C--18ns/110ns
Test Condition--400V, 3A, 100 Ohm, 15V
Collector Emitter Voltage VCEO Max--600 V
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