IRGR4610DPBF vs IRGR4610DTRLPBF vs IRGR4610D

 
PartNumberIRGR4610DPBFIRGR4610DTRLPBFIRGR4610D
DescriptionIGBT Transistors 600V TRENCH ULTRAFAST IGBTIGBT Transistors 600V TRENCH IGBT ULTRAFAST
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSY--
TechnologySiSi-
Package / CaseDPAK-3DPAK-3-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage1.7 V2.14 V1.7 V
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C16 A16 A16 A
Pd Power Dissipation77 W77 W-
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
PackagingTubeReelTube Alternate Packaging
Continuous Collector Current Ic Max16 A10 A16 A
BrandInfineon / IRInfineon / IR-
Gate Emitter Leakage Current100 nA100 nA100 nA
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity753000-
SubcategoryIGBTsIGBTs-
Part # AliasesSP001534026SP001546160-
Unit Weight0.012346 oz0.012346 oz0.012346 oz
Series---
Package Case--TO-252-3, DPak (2 Leads + Tab), SC-63
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D-Pak
Power Max--77W
Reverse Recovery Time trr--74ns
Current Collector Ic Max--16A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--18A
Vce on Max Vge Ic--2V @ 15V, 6A
Switching Energy--56μJ (on), 122μJ (off)
Gate Charge--13nC
Td on off 25°C--27ns/75ns
Test Condition--400V, 6A, 47 Ohm, 15V
Pd Power Dissipation--77 W
Collector Emitter Voltage VCEO Max--600 V
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