IRGS4B60KD1PBF vs IRGS4B60KD1 GS4B60KD1 vs IRGS4B60KD1

 
PartNumberIRGS4B60KD1PBFIRGS4B60KD1 GS4B60KD1IRGS4B60KD1
DescriptionIGBT Transistors 600V LO-VCEON NON PNCH THRU COPCK IGBT
ManufacturerInfineon-IR
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-263-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.1 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C11 A--
Pd Power Dissipation63 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
SeriesRC--
PackagingTube--
Height4.57 mm--
Length10.31 mm--
Width9.45 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity50--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesSP001541856--
Unit Weight0.009185 oz--
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