IRGS4B60KD1TRRP vs IRGS4B60KD1TRLP vs IRGS4B60KD1TRR

 
PartNumberIRGS4B60KD1TRRPIRGS4B60KD1TRLPIRGS4B60KD1TRR
DescriptionIGBT Transistors 600V LO-VCEON NON PNCH THRU COPCK IGBTIGBT Transistors 600V 10A
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseTO-263-3TO-263-3-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage2.1 V2.1 V-
Maximum Gate Emitter Voltage20 V20 V+/- 20 V
Continuous Collector Current at 25 C11 A11 A11 A
Pd Power Dissipation63 W63 W-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
SeriesRCRC-
PackagingReelReelTape & Reel (TR) Alternate Packaging
Height4.57 mm4.57 mm-
Length10.31 mm10.31 mm-
Width9.45 mm9.45 mm-
BrandInfineon TechnologiesInfineon Technologies-
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity800800-
SubcategoryIGBTsIGBTs-
TradenameTRENCHSTOPTRENCHSTOP-
Part # AliasesSP001534000SP001548306-
Unit Weight0.009185 oz0.009185 oz0.009185 oz
Package Case--TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D2PAK
Power Max--63W
Reverse Recovery Time trr--93ns
Current Collector Ic Max--11A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type--NPT
Current Collector Pulsed Icm--22A
Vce on Max Vge Ic--2.5V @ 15V, 4A
Switching Energy--73μJ (on), 47μJ (off)
Gate Charge--12nC
Td on off 25°C--22ns/100ns
Test Condition--400V, 4A, 100 Ohm, 15V
Collector Emitter Voltage VCEO Max--600 V
Top