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| PartNumber | IRL6342TRPBF | IRL6342PBF | IRL6342 |
| Description | MOSFET MOSFT 30V 9.9A 14.6mOhm 2.5V cpbl | MOSFET 30V 1 N-CH HEXFET 14.6mOhms 11nC | |
| Manufacturer | Infineon | Infineon | International Rectifier |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 9.9 A | 9.9 A | - |
| Rds On Drain Source Resistance | 15 mOhms | 14.6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | 1.1 V | - |
| Vgs Gate Source Voltage | 12 V | 12 V | - |
| Qg Gate Charge | 11 nC | 11 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.5 W | 2.5 W | - |
| Configuration | Single | Single | Single Quad Drain Triple Source |
| Packaging | Reel | Tube | Tube |
| Height | 1.75 mm | 1.75 mm | - |
| Length | 4.9 mm | 4.9 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 3.9 mm | 3.9 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Forward Transconductance Min | 38 S | 38 S | - |
| Fall Time | 14 ns | 14 ns | 14 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 12 ns | 12 ns | 12 ns |
| Factory Pack Quantity | 4000 | 95 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 33 ns | 33 ns | 33 ns |
| Typical Turn On Delay Time | 6 ns | 6 ns | 6 ns |
| Part # Aliases | SP001572774 | SP001558090 | - |
| Unit Weight | 0.017870 oz | 0.019048 oz | 0.019048 oz |
| Channel Mode | - | Enhancement | Enhancement |
| Type | - | HEXFET Power MOSFET | - |
| Package Case | - | - | SOIC-8 |
| Pd Power Dissipation | - | - | 2.5 W |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 9.9 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | 0.5 V to 1.1 V |
| Rds On Drain Source Resistance | - | - | 14.6 mOhms |
| Qg Gate Charge | - | - | 11 nC |
| Forward Transconductance Min | - | - | 38 S |