IRLS640A vs IRLS640APBF vs IRLS641

 
PartNumberIRLS640AIRLS640APBFIRLS641
DescriptionMOSFET 200V N-Channel a-FET Logic Level
ManufacturerON SemiconductorF-
Product CategoryMOSFETIC Chips-
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current9.8 A--
Rds On Drain Source Resistance180 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation40 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height16.07 mm--
Length10.36 mm--
SeriesIRLS640A--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.9 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min13.3 S--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time46 ns--
Typical Turn On Delay Time11 ns--
Unit Weight0.080072 oz--
Top