IXBX50N360HV vs IXBX25N250 vs IXBX55N300

 
PartNumberIXBX50N360HVIXBX25N250IXBX55N300
DescriptionIGBT Transistors 3600V/125A Reverse Conducting IGBTIGBT Transistors DISC IGBT BIMSFT-VERYHIVOLTIGBT 3000V 130A 625W PLUS247
ManufacturerIXYSIXYS-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-PLUS-HV-3TO-247-3-
Mounting StyleThrough HoleThrough Hole-
SeriesVery High VoltageVery High Voltage-
PackagingTubeTube-
Height21.4 mm21.34 mm-
Length16.2 mm16.13 mm-
Width5.1 mm5.21 mm-
BrandIXYSIXYS-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Unit Weight0.232808 oz0.056438 oz-
Configuration-Single-
Collector Emitter Voltage VCEO Max-2.5 kV-
Collector Emitter Saturation Voltage-3.3 V-
Maximum Gate Emitter Voltage-20 V-
Continuous Collector Current at 25 C-55 A-
Pd Power Dissipation-300 W-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Continuous Collector Current Ic Max-55 A-
Gate Emitter Leakage Current-+/- 100 nA-
Tradename-BIMOSFET-
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