IXDH30N120D1 vs IXDH30N120 vs IXDH30N120AU1

 
PartNumberIXDH30N120D1IXDH30N120IXDH30N120AU1
DescriptionIGBT Transistors 30 Amps 1200VIGBT Transistors 30 Amps 1200V
ManufacturerIXYSIXYS-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-3TO-247-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1.2 kV1.2 kV-
Collector Emitter Saturation Voltage2.4 V2.4 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C60 A60 A-
Pd Power Dissipation300 W300 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesIXDH30N120IXDH30N120-
PackagingTubeTube-
Continuous Collector Current Ic Max76 A76 A-
Height21.46 mm21.46 mm-
Length16.26 mm16.26 mm-
Operating Temperature Range- 55 C to + 150 C- 55 C to + 150 C-
Width5.3 mm5.3 mm-
BrandIXYSIXYS-
Continuous Collector Current60 A60 A-
Gate Emitter Leakage Current500 nA500 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Unit Weight0.229281 oz0.229281 oz-
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