IXFA12N50P vs IXFA12N65X2 vs IXFA12N50P-TRL

 
PartNumberIXFA12N50PIXFA12N65X2IXFA12N50P-TRL
DescriptionMOSFET 500V 12AMOSFET 650V/12A TO-263MOSFET IXFA12N50P TRL
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V650 V-
Id Continuous Drain Current12 A12 A-
Rds On Drain Source Resistance500 mOhms310 mOhms-
Vgs th Gate Source Threshold Voltage5.5 V3 V-
Vgs Gate Source Voltage30 V10 V-
Qg Gate Charge29 nC18.5 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation200 W180 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFET-
PackagingTubeTubeReel
Height16 mm--
Length10.66 mm--
SeriesIXFA12N50P650V Ultra Junction X2POLAR
Transistor Type1 N-Channel1 N-Channel-
TypePolar Power MOSFET HiPerFET--
Width4.83 mm--
BrandIXYSIXYSIXYS
Forward Transconductance Min7.5 S4.8 S-
Fall Time20 ns12 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time27 ns26 ns-
Factory Pack Quantity5050800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time65 ns45 ns-
Typical Turn On Delay Time22 ns27 ns-
Unit Weight0.056438 oz--
Top