IXFB70N100X vs IXFB70N60Q2 vs IXFB72N55Q2

 
PartNumberIXFB70N100XIXFB70N60Q2IXFB72N55Q2
DescriptionMOSFET 1000V 70A PLUS264 Power MOSFETMOSFET 70 Amps 600VMOSFET 72 Amps 550V 0.07 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CasePLUS264-3PLUS-264-3PLUS-264-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage1000 V600 V550 V
Id Continuous Drain Current70 A70 A72 A
Rds On Drain Source Resistance89 mOhms80 mOhms72 mOhms
Vgs th Gate Source Threshold Voltage3.5 V--
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge350 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1785 W890 W890 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHyperFETHyperFET
PackagingTubeTubeTube
SeriesX-ClassIXFB70N60IXFB72N55
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandIXYSIXYSIXYS
Forward Transconductance Min34 S--
Fall Time9 ns12 ns10 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time20 ns25 ns23 ns
Factory Pack Quantity252525
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time127 ns60 ns58 ns
Typical Turn On Delay Time48 ns26 ns30 ns
Height-26.59 mm21.34 mm
Length-20.29 mm16.13 mm
Width-5.31 mm5.21 mm
Unit Weight-0.056438 oz0.056438 oz
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