IXFE44N50Q vs IXFE44N50QD2 vs IXFE44N50QD3

 
PartNumberIXFE44N50QIXFE44N50QD2IXFE44N50QD3
DescriptionMOSFET 44 Amps 500V 0.12 RdsMOSFET 44 Amps 500V 0.12 RdsMOSFET 44 Amps 500V 0.12 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleChassis MountSMD/SMTSMD/SMT
Package / CaseISOPLUS-227-4--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current39 A--
Rds On Drain Source Resistance120 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation400 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHyperFET--
PackagingTubeTubeTube
Height9.65 mm--
Length38.23 mm--
SeriesIXFE44N50QIXFE44N50QD2IXFE44N50QD3
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width25.42 mm--
BrandIXYS--
Fall Time10 ns10 ns10 ns
Product TypeMOSFET--
Rise Time22 ns22 ns22 ns
Factory Pack Quantity10--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns75 ns75 ns
Typical Turn On Delay Time33 ns33 ns33 ns
Package Case-ISOPLUS-227-4ISOPLUS-227-4
Pd Power Dissipation-400 W400 W
Vgs Gate Source Voltage-20 V20 V
Id Continuous Drain Current-39 A39 A
Vds Drain Source Breakdown Voltage-500 V500 V
Rds On Drain Source Resistance-120 mOhms120 mOhms
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