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| PartNumber | IXFH100N30X3 | IXFH102N15T | IXFH100N25P |
| Description | MOSFET DISCMSFT NCHULTRJNCTN X3CLASS | MOSFET 102 Amps 0V | MOSFET 100 Amps 250V 0.027 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Tradename | HiPerFET | HiPerFET | HiPerFET |
| Packaging | Tube | - | Tube |
| Brand | IXYS | IXYS | IXYS |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Technology | - | Si | Si |
| Mounting Style | - | Through Hole | Through Hole |
| Package / Case | - | TO-247-3 | TO-247-3 |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 150 V | 250 V |
| Id Continuous Drain Current | - | 102 A | 100 A |
| Configuration | - | Single | Single |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Unit Weight | - | 0.056438 oz | 0.229281 oz |
| Rds On Drain Source Resistance | - | - | 27 mOhms |
| Vgs th Gate Source Threshold Voltage | - | - | 5 V |
| Vgs Gate Source Voltage | - | - | 20 V |
| Qg Gate Charge | - | - | 185 nC |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Pd Power Dissipation | - | - | 600 W |
| Channel Mode | - | - | Enhancement |
| Height | - | - | 21.46 mm |
| Length | - | - | 16.26 mm |
| Series | - | - | IXFH100N25P |
| Type | - | - | PolarHT HiPerFET Power MOSFET |
| Width | - | - | 5.3 mm |
| Forward Transconductance Min | - | - | 40 S |
| Fall Time | - | - | 28 ns |
| Rise Time | - | - | 26 ns |
| Typical Turn Off Delay Time | - | - | 100 ns |
| Typical Turn On Delay Time | - | - | 25 ns |